The choice of solvent used for annealing allows for control of the self-assembled pattern morphology. Solvent vapor annealing improves the quality of the self-assembled patterns in this material without compromising its ability to function as a photoresist. more Poly(alpha-methylstyrene)-block-poly(4-hydroxystyrene) acts as both a lithographic deep UV photoresist and a self-assembling material, making it ideal for patterning simultaneously by both top-down and bottom-up fabrication methods. Poly(alpha-methylstyrene)-block-poly(4-hydroxystyrene) acts as both a lithographic deep UV photor. Further, images and physical characteristics of the materials will be provided in both positive and negative tones for 193 nm and e-beam lithography. Imaging data, including cross-sections, will be shown for 60 nm lines/spaces (l/s) for 193 nm and e-beam lithography. The refractive index of the resist at 193 nm is about 2.0, significantly improving the DOF. This work will show etch data on a material that is ~3 times more etch-resistant than a PHOST standard. Beyond the etch resistance of the material, several other advantages exist, including improved depth of focus (DOF) and reduced line edge roughness (LER). The development of such an inorganic resist can provide several advantages to conventional chemically amplified resist (CAR) systems. The different ligands on the surface of the nanoparticles give them unique properties, allowing these films to act as positive or negative tone photoresists for 193 nm or electron beam lithography. During the sol-gel processing of nanoparticles, a variety of organic ligands can be used to control the surface chemistry of the final product. Hafnium oxide nanoparticles are used as a core to build the inorganic nanocomposite into an imageable photoresist. To address this problem, we have developed new inorganic nanocomposite photoresists with significantly higher etch resistance than the usual polymer-based photoresists. For the 22 nm node, the critical aspect ratio will be less than 2:1, meaning 40-45 nm thick resists will be commonplace. Thinner films limit the ability to transfer the pattern to the substrate during etch steps, obviating the need for a hardmask layer and thus increasing processing costs. more The trend of ever decreasing feature sizes in subsequent lithography generations is paralleled by the need to reduce resist thickness to prevent pattern collapse. The trend of ever decreasing feature sizes in subsequent lithography generations is paralleled by.
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